دیتاشیت NCE60P10K
مشخصات دیتاشیت
| نام دیتاشیت |
NCE60P10K
|
| حجم فایل |
75.843
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Wuxi NCE Power Semiconductor NCE60P10K
-
Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
45W
-
Total Gate Charge (Qg@Vgs):
25nC@10V
-
Drain Source Voltage (Vdss):
60V
-
Input Capacitance (Ciss@Vds):
930pF@30V
-
Continuous Drain Current (Id):
10A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
35pF@30V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
106mΩ@10V,10A
-
Package:
TO-252
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Manufacturer:
Wuxi NCE Power Semiconductor
